Intel, Micron sample 3-bit-per-cell NAND memory

Intel and Micron say they are now sampling 3-bit-per-cell NAND flash memory on 25-nanometer process technology.

The pair teamed up to create joint venture IM Flash Technologies, in a bid to keep a nose ahead of far-eastern competitors. The 64Gb, or 8 gigabyte (GB), 25nm device announced yesterday was designed by IM and stores three bits of information per cell, rather than the one or two bits possible until now.

The new 64Gb 3bpc 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at lower prices.

The triple-level cell device is more than 20 per cent smaller than the same capacity of Intel and Micron's previous two-bit device,

"With January's introduction of the industry's smallest die size at 25nm, quickly followed by the move to 3-bit-per-cell on 25nm, we continue to gain momentum and offer customers a compelling set of leadership products," Tom Rampone, Intel's general manager of Intel NAND Solutions Group trumpeted in a statement. "Intel plans to use the design and manufacturing leadership of IMFT to deliver higher-density, cost-competitive products to our customers based on the new 8GB TLC 25nm NAND device."