Samsung announces Ultra-Wide Mobile DRAM

Samsung has announced a new mobile memory specification that uses an ultra-wide interface to transfer data around four times faster than previous technologies while drawing significantly less power.

Announced today at the International Solid State Circuits Conference, the new Wide I/O Mobile DRAM technology can transfer data at a rate of 12.8GB/s - that's around eight times faster than standard mobile DDR memory and four times faster than the LPDDR2 memory found in many tablets. Despite the improved performance, Samsung also claims its latest creation can reduce power consumption by around 87 per cent.

The company's technology manages this impressive leap in performance by using a 512-pin input-output interface, offering far more channels for data transmission than the 32-pin interface used in previous generation mobile DRAM products.

Samsung claims that the new ultra-wide input-output interface combines with the usual power and command pins to allow a single Wide I/O DRAM chip to support up to 1,200 pins - although it's not yet clear whether the reference design will go quite that far.

"Following the development of 4Gb LPDDR2 DRAM last year, our new mobile DRAM solution with a wide I/O interface represents a significant contribution to the advancement and development of high-performance mobile products," claimed Samsung's Byungse So at the conference. "We will continue to aggressively expand our high-performance mobile memory product line in a determined effort to further propel the growth of the mobile industry."

The demand for high-performance yet low-power memory has never been higher, thanks in large to the massive growth enjoyed by the tablet market this last year. Clearly, Samsung is hoping to be at the forefront of this wave - and if the technology performs as the company's figures claim, it's likely to be in the lead for some time to come.