Samsungs Reveals 1GB Mobile DRAM With Wide I/O Interface

Mobile components manufacturer Samsung has announced the development of 1GB DRAM for mobile devices that comes with a wide I/O interface and uses significantly less power.

The DRAM, which was designed using 50 nm architecture, has been developed for smartphones and tablets. It offers 4 times more bandwidth than the DDR2 DRAM that was released last year by Samsung.

The company says that the DRAM is capable of transmitting data at a speed of 12.8 gigabytes per second and uses 87 percent less power than existing chips.

The DRAM sports a whooping 512 pins for data input and output for enhanced data transmission. Previous generation DRAMs used a maximum of 32 pins.

Byungse So, senior vice president of memory product planning & application engineering at Samsung Electronics, said in a statement, “following the development of 4Gb LPDDR2 DRAM (low-power DDR2 dynamic random access memory) last year, our new mobile DRAM solution with a wide I/O interface represents a significant contribution to the advancement of high-performance mobile products.”

"We will continue to aggressively expand our high-performance mobile memory product line to further propel the growth of the mobile industry," he added.

According to V3.co.uk, Samsung will look to add to its 40 per cent DRAM market share with a 20nm-class 4GB wide interface mobile DRAM in 2013.