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HP claims memristor breakthrough

HP said it has created "development-ready architectures" for memory chips using memristors and believes devices incorporating the element could come to market within the next few years.

HP researchers have also stacked multiple layers of memristor memory on top of each other in a single chip.

Memristors or “memory resistors”, comprise an ultrathin film of titanium dioxide which is subjected to electrical current that jiggers individual atoms to effect changes in resistance.

HP said it created a 3D array of memristors and increased their switching speed to match silicon. Memristors operate on a molecule-sized-level 3nm making today's silicon look cumbersome.

Memristors require less energy to operate and are faster than present solid-state storage technologies such as flash memory, and they can store at least twice as much data in the same area.

"We anticipate the ability to make more compact and power-efficient computing systems well into the future, even after it is no longer possible to make transistors smaller via the traditional Moore’s Law approach.” said R. Stanley Williams, senior fellow and director, of Information and Quantum Systems Lab, HP, and specially wheeled out for the occasion.