Samsung kicks off 2Gb 30nm DDR3 production

After proudly sampling its first 30nm 2Gb DDR3 memory chips back in February, Korean tech conglomerate Samsung has just announced that it's kicked off mass production of the intricate chips.

According to Samsung, these are the DRAM industry's first 30nm chips to feature a 2Gb (256MB) capacity, which the company says are needed to meet the burgeoning demand for DDR3 memory.

President of Samsung's memory division, Soo-In Cho, said the new DRAM will combine "extremely high performance and reduced power consumption for PC and server applications." With its fast-switching, tiny transistors, Samsung reckons the new 30nm chips provide the "highest performance solution in the industry."

The company says ECC server modules using the new memory can hit 1.866Gb/sec using just 1.35V, while desktop PC DIMMs can reach 2.133Gb/sec with 1.5V. This, says Samsung, makes the new chips 1.6-times the speed of equivalent 50nm DDR3 chips.

In addition to the improved performance, the smaller transistors also consume less power, and Samsung claims the new chips use approximately 20 per cent less juice than comparable 50nm chips when used in servers.

The 30nm fun doesn't stop at 2Gb chips either. Samsung says it also has plans to start producing 4Gb (512MB) 30nm chips by the end of 2010. The company also promises to start producing its own modules based on the chips soon. These will include RDIMMs for servers in capacities between 4GB and 32GB, plus 2GB, 4GB and 8GB DIMMs and SODIMMs for laptops and desktop PCs.