Memory heavyweights Samsung and Toshiba have teamed up to push the solid state industry towards using toggle mode DDR2 NAND memory.
With a 400Mb/sec interface, the toggle mode DDR2 specification can effectively triple the bandwidth of the 133MB/sec interface found on toggle mode DDR memory. It also multiplies the headroom of the 40Mb/sec interface used in standard SDR NAND memory by a factor of ten.
Samsung is no stranger to toggle mode DDR2 memory, announcing a 512GB SSD based on the technology last month. Using 30nm multi-level cell (MLC) chips, Samsung claims the drive can dish out sequential read speeds of 250MB/sec, and sequential write speeds of 220MB/sec.
Samsung Electronics' executive vice president of memory marketing Dong-Soo Jun explained the need to push for faster NAND memory. "The rapid adoption of fourth generation (4G) smartphones, tablet PCs and solid state drives is expected to drive demand for a broader range of high-performance NAND," he said.
Both companies say they're now committed to ensuring the toggle DDR2 specification has a 400Mb/sec interface. In a statement, the two memory makers said they "support industry-wide adoption of the high-speed specification, which would facilitate faster acceptance of toggle DDR memory with hardware engineers and application designers."
Last month, Toshiba and Samsung say they participated in "standardisation efforts for the new technology" via the JEDEC Solid State Technology Association.