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Micron’s Hybrid Memory Cube Breaks DRAM Memory Wall

At the recently held Hot Chips Conference, semiconductor giant from Idaho, USA, Micron Technology recently demonstrated a prototype of what could be termed as the future of the DRAM technology.

Known as Hybrid Memory Cube (HMC), this new technology features a logic layer, blended with a stack of memory chips which are interconnected vertically with through silicon vias (TSVs).

Micron claims that the total number of contacts, combined with the short distances that separate them, eventually result in a significantly increased data transfer rate than that of the existing memory architectures. In fact, proving the company’s stand, the prototype demonstrated at the Hot Chips conference exhibited a speed as high as 128 Gbps.

The incredible speed achieved by the single HMC and its potential to bring a revolutionary change in future memory modules can be understood by comparing it to what today’s DDR3- 1600 series is capable of delivering at a speed of mere 12.8 Gbps.

The company also brags that even a single HMC is capable of facilitating a speed, almost 20 times faster than the standard bandwidth provided by DDR3 modules. Not just that, the energy consumed by the HMC is also far less than what has been achieved by the existing technologies.

[Image Courtesy Micron Technology]