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Samsung breaks through NAND flash limits using 3D process

Samsung has announced it has begun mass producing the industry’s first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which Samsung says "breaks through the current scaling limit for existing NAND flash technology".

The new 3D V-NAND will be used for a wide range of consumer electronics and enterprise applications, including embedded NAND storage and solid state drives (SSDs).

Samsung’s V-NAND offers a 128 gigabit (GB) density in a single chip, using the company’s proprietary vertical cell structure, based on 3D Charge Trap Flash (CTF) technology and vertical interconnect process technology to link the 3D cell array.

By applying both of these technologies Samsung’s 3D V-NAND is able to provide over twice the scaling of 20nm-class planar NAND flash.

“The new 3D V-NAND flash technology is the result of years of efforts to push beyond conventional ways of thinking and pursue much more innovative approaches in overcoming limitations in the design of memory semiconductor technology,” said Jeong-Hyuk Choi, senior vice president for flash products and technology at Samsung Electronics.

He said, “Following the world’s first mass production of 3D Vertical NAND, we will continue to introduce 3D V-NAND products with improved performance and higher density, which will contribute to further growth of the global memory industry.”

For the past 40 years, conventional flash memory has been based on planar structures that make use of floating gates. As manufacturing process technology has proceeded to the 10nm-class and beyond, said Samsung, concern for a scaling limit arose due to the cell-to-cell interference that causes a trade-off in the reliability of NAND flash products.

This led to added development time and costs. Samsung’s new V-NAND solves the technical challenges through a vertical stacking of planar cell layers for a new 3D structure.

In Samsung’s CTF-based NAND flash architecture, an electric charge is temporarily placed in a "holding chamber" of the non-conductive layer of flash that is composed of silicon nitride (SiN), instead of using a floating gate to prevent interference between neighbouring cells.

By making this CTF layer three-dimensional, the reliability and speed of the NAND memory has improved sharply. The new 3D V-NAND shows not only an increase of a minimum of 2X to a maximum 10X higher reliability, said Samsung, but also twice the write performance over conventional 10nm-class floating gate NAND flash memory.

Also, Samsung's V-NAND proprietary vertical interconnect process can stack as many as 24 cell layers vertically, using special etching technology that connects the layers electronically by punching holes from the highest layer to the bottom.

With the new vertical structure, Samsung says it can deliver higher density NAND flash memory products by increasing the 3D cell layers without having to continue planar scaling, "which has become incredibly difficult to achieve", meaning Samsung is promising even more powerful offerings in the future using its technology.

"Samsung has strengthened its competitiveness in the memory industry as well as set the foundation for more advanced products including one terabit (TB) NAND flash."

According to research firm IHS iSuppli, the global NAND flash memory market is expected to reach around $30.8 billion (£20.5 billion) in revenues by the end of 2016, from approximately $23.6 billion (£15.7 billion) in 2013.