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Samsung's new mobile memory solution promises power and performance

Samsung has unveiled its new 8-gigabit memory solution, available in 1GB chips for mobile devices, which the South Korean tech giant is calling the first low-power, double-data rate 4 (LPDDR4) DRAM solution to hit the market.

The new LPDDR4 modules sport 1GB of DRAM in a single die, providing "50 percent higher performance than the fastest LPDDR3 or DDR3 memory while consuming approximately 40 percent less energy at 1.1 volts" in the highest-density configuration for mobile DRAM on the market, according to Samsung.

Makers of mobile devices like smartphones could utilise four 1GB chips to kit their products out with a whopping 4GB of ultra-fast random-access memory—double what you'll find today in the most DRAM-loaded handsets such as Samsung's own Galaxy S4.

"This next-generation LPDDR4 DRAM will contribute significantly to faster growth of the global mobile DRAM market, which will soon comprise the largest share of the entire DRAM market," Young-Hyun Jun, executive vice president of memory sales and marketing at Samsung, said in a statement.

"We will continue introducing the most advanced mobile DRAM one step ahead of the rest of the industry so that global OEMs can launch innovative mobile devices with exceptional user convenience in the timeliest manner."

In addition to targeting the next generation of high-end smartphones with UltraHD displays, Samsung said it is positioning its new 8-gigabit memory products for use in tablets and ultra-slim laptops, as well as for "high-performance network systems" built by commercial customers.

The next-gen, 20-nanometer DRAM "will provide the highest level of density, performance, and energy efficiency for mobile memory applications, enabling end users to have faster, more responsive applications, more advanced features, and higher resolution displays while maximizing battery life," according to Samsung.

Samsung's utilises a new standard specification for LPDDR4 DRAM called the Low Voltage Swing Terminated Logic (LVSTL) I/O interface, which "enable(s) a data transfer rate per pin of 3,200 megabits per second (Mbps)," or twice the rate afforded by 20nm LPDDR3 DRAM products currently on the market.

That and other advances with the new memory technology translate to 50 per cent better overall performance and 40 per cent less energy consumed at 1.1 volts than current-gen DRAM solutions for mobile devices.

In July 2013 Samsung lifted the lid on what it claims was the "world's fastest embedded memory", so we'll have to see how the new memory products shape up when Samsung ship them in 2014.