SanDisk has announced the release of its next generation iNAND Extreme embedded flash drive at Mobile World Congress in Barcelona.
Available in capacities up to 64GB, the storage device offers three times the random write speed and twice the sequential read speed of the current model. The upgrade is significant for Android device manufacturers, enabling the development of new smartphones and tablets with an even greater level of responsiveness.
"As the mobile capabilities become richer, higher capacity and more sophisticated storage is essential to both provide a great user experience, as well as unlock the true potential of these types of applications," said Bob O'Donnell, founder and chief analyst, TECHnalysis Research, LLC.
"iNAND Extreme works with the latest processing technology to reduce latency and take application performance to the next level, from playing 4K video to faster multi-shot, to more responsive gaming apps." said Drew Henry, senior vice president and general manager, Mobile and Connected Solutions, SanDisk.
The iNAND now also now incorporates an error correction mechanism, significantly improving the device's storage endurance and fragmentation resistance. Android devices should therefore perform well throughout the device's lifetime. It is also built on SanDisk's 1Y nanometre process technology, which enables 64GB of storage in a package only 1mm thick.